材料科学
双稳态
光电子学
非易失性存储器
铁电性
纳米线
晶体管
场效应晶体管
电场
电压
纳米技术
电气工程
物理
电介质
量子力学
工程类
作者
Xutao Zhang,Ziyuan Li,Xiaomei Yao,Hai Huang,Dongdong Wei,Chen Zhou,Tuo Zhou,Xiaoming Yuan,Ping Ping Chen,Weida Hu,Jin Zou,Wei Lü,Lan Fu
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2019-08-13
卷期号:1 (9): 1825-1831
被引量:13
标识
DOI:10.1021/acsaelm.9b00368
摘要
Here, we demonstrate that single InAs nanowire (NW)-based field-effect transistor exhibits wavelength-selective switching between positive and negative photoresponses caused by abundant defect states on the NW surface. On this basis, by modifying the NW carrier transport behavior through the strong local electric field formed by polarized ferroelectric polymer P(VDF-TrFE), a rewritable NW memory device can be achieved with electrical bistability and low-power consumption when writing with different wavelength light pulses without any gate voltage. Our study clearly reveals the significant role of the NW surface states in not only photodetecting devices but also promising novel nonvolatile light-assisted memory devices for numerous future applications.
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