Light-Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory

Here, we demonstrate that single InAs nanowire (NW)-based field-effect transistor exhibits wavelength-selective switching between positive and negative photoresponses caused by abundant defect states on the NW surface. On this basis, by modifying the NW carrier transport behavior through the strong local electric field formed by polarized ferroelectric polymer P(VDF-TrFE), a rewritable NW memory device can be achieved with electrical bistability and low-power consumption when writing with different wavelength light pulses without any gate voltage. Our study clearly reveals the significant role of the NW surface states in not only photodetecting devices but also promising novel nonvolatile light-assisted memory devices for numerous future applications.