共发射极
微晶
光电子学
图层(电子)
异质结
材料科学
无定形固体
兴奋剂
非晶硅
结晶度
太阳能电池
纳米技术
晶体硅
复合材料
化学
结晶学
作者
Tatsuro Watahiki,Takeo Furuhata,Tsutomu Matsuura,Tomohiro Shinagawa,Yusuke Shirayanagi,Takayuki Morioka,Tetsuro Hayashida,Yohei Yuda,Shintaro Kano,Yuichi Sakai,Hidetada Tokioka,Yoshihiko Kusakabe,Hiroyuki Fuchigami
标识
DOI:10.7567/apex.8.021402
摘要
We have developed highly crystallized n-type microcrystalline Si layers as window layers for rear emitter Si heterojunction solar cells. We introduce a seed layer between an n-type microcrystalline Si layer and an intrinsic amorphous Si layer to improve the crystallinity of the n-type microcrystalline Si layer. By using this stacked layer instead of an n-type amorphous Si layer, the contact resistance between the n-type thin layer and In2O3:H is reduced without Al-doped ZnO. As a result, we obtain a high short-circuit current and a high fill factor simultaneously, and achieve a solar cell efficiency of 23.43%.
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