1200V 4H-SiC Trench Devices

The expectations for Silicon Carbide (SiC) devices in advanced power electronics applications for saving energy continue to grow. This paper presents the ROHM 3rd generation, 1200V, 4H-SiC MOSFETs and 1200V 4H-SiC ultralow forward voltage drop (VF) Schottky barrier diodes (SBDs) with trench structure. Firstly, SiC trench MOSFETs, of which mass production is in preparation to start in 2014, exhibits half of the on-resistance (Ron) of the same size, 1200 V, ROHM SiC planar MOSFETs. Secondly, the developed SiC SBDs successfully showed about 0.3V lower VF than that of ROHM conventional 2G SBDs.