2D Layered Materials for Ultraviolet Photodetection: A Review

Abstract 2D layered materials (2DLMs) have revolutionized the field of optoelectronics owing to their exceptional properties of strong light–matter interaction, atomic‐level thickness, flexibility, and ability to form van der Waals heterostructures. Most of the research in this area is based on narrow bandgap materials such as transition metal dichalcogenides, which are ideal for fabricating visible and infrared photodetectors. However, utilizing the benefits of 2D materials for the detection of ultraviolet light requires focus on newly emerging wide bandgap 2DLMs. In the present review, an attempt is made to highlight the significance of wide bandgap 2DLMs for fabricating state‐of‐the‐art ultraviolet photodetectors. In this review, first, the fundamentals of photodetectors, including various sensing mechanisms, are discussed. After describing the growth techniques briefly, the readers are introduced to the role of 2DLMs in ultraviolet photodetection based on their bandgap distribution. This is followed by a comprehensive review of the structure, properties and ultraviolet photodetectors based on various 2DLM families including main group metal chalcogenides (GaS, GaSe, GeS 2 ), metal oxides (MoO 3 ), metal halides (PbI 2 ), metal phosphorus trichalcogenides (NiPS 3 , MnPS 3 ) and hexagonal boron nitride (h‐BN). Finally, the review is summarized and the authors’ perspective is given on the challenges and upcoming development in this field.