A low capacitance power MOSFET with an integral gate driver

For efficient operation in the 10 MHz range, a resonant power converter needs a power MOSFET with very low capacitance for a given on-state resistance and an integral turn-off driver. The former allows the resonant frequency to be high and the gate drive losses low, while the latter avoids the parasitic inductance of bond wires used to connect the gate to an external driver. The reasons and methods for making such a MOSFET are presented in this paper.