铟
材料科学
光电子学
凝聚态物理
可变距离跳频
场效应晶体管
带隙
电子迁移率
感应高电子迁移率晶体管
晶体管
基质(水族馆)
载流子
热传导
电气工程
电压
物理
工程类
地质学
复合材料
海洋学
作者
Milinda Wasala,Prasanna Patil,Sujoy Ghosh,Rana Alkhaldi,Lincoln Weber,Sidong Lei,Róbert Vajtai,Pulickel M. Ajayan,Saikat Talapatra
出处
期刊:2D materials
[IOP Publishing]
日期:2020-02-27
卷期号:7 (2): 025030-025030
被引量:7
标识
DOI:10.1088/2053-1583/ab6f79
摘要
Atomically thin Van der Waals solids that exhibit direct band gap in their few layer form can substantially impact the field of two dimensional (2D) materials based electronic devices and related applications. Here we report on electronic charge transport behavior of multi layer n-type InSe field-effect transistor (FET) devices fabricated on SiO2/Si substrate with seven different channel thicknesses, t > 20 nm, well within its direct band gap regime. Through gate dependent conductivity measurements over a wide range of temperatures (T; 20 K
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