A Study of TiN/Zr(N)/TiN Multilayer Films as a Diffusion Barrier between Cu and Si

New TiN/Zr(N)/TiN multilayer structures have been investigated for the application of a diffusion barrier between Cu and Si in deep submicron integrated circuits. The TiN/ZrN/TiN structure has a good electrical, diffusion and adhesion properties between Cu and Si compared with those of TiN layer and TiN/Zr/TiN structure. In Cu/TiN/ZrN/TiN/Si structure, any reaction between Cu and Si up to 700 for 30min. was not observed, and adhesion properties were enhanced as increasing of ZrN thickness(total thickness of TiN/ZrN/TiN barrier layer : 1000, thickness of Cu layer : 3000). Each layer was deposited using DC/RF magnetron sputtering system at room temperature. The effectiveness of TiN/Zr(N)/TiN structure as a diffusion barrier and adhesion against Cu layer were explored using XRD, AES and SEM technologies.