光刻胶
光刻
材料科学
抵抗
光电子学
计算光刻
平版印刷术
光学
纳米技术
X射线光刻
图层(电子)
物理
作者
M. M. Andronic,Yu. S. Bobrova,Ilya A. Rodionov,Yu. B. Tsvetkov
出处
期刊:Nucleation and Atmospheric Aerosols
日期:2022-01-01
卷期号:2470: 020012-020012
被引量:1
摘要
Contact photolithography for photoresist layers thicker than 1 micron is widely used in creating microreliefs in production technologies of microelectromechanical systems, micropackaging, optical printed circuit boards and other microdevices. Microrelief walls slope in photoresist inflicts significant influence on the microdevice output parameters. Based on analysis of the contact photolithography features, it is proposed a mathematical model based on the Fresnel diffraction of image generation in the thick photoresist layers. The model and statistical processing of results obtained on its basis adequately describe relationship between the photolithography output parameters, i.e. the microrelief sidewalls slope, and the photoresist absorption coefficient and thickness.
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