Broadband, Ultra-High-Responsive Monolayer MoS2/SnS2 Quantum-Dot-Based Mixed-Dimensional Photodetector

Atomically thin two-dimensional (2D) materials have gained significant attention from the research community in the fabrication of high-performance optoelectronic devices. Even though there are various techniques to improve the responsivity of the photodetector, the key factor limiting the performance of the photodetectors is constrained photodetection spectral range in the electromagnetic spectrum. In this work, a mixed-dimensional 0D/2D SnS 2 -QDs/monolayer MoS 2 hybrid is fabricated for high-performance and broadband (UV–visible–near-infrared (NIR)) photodetector. Monolayer MoS 2 is deposited on SiO 2 /Si using chemical vapor deposition (CVD), and SnS 2 -QDs are prepared using a low-cost solution-processing method. The high performance of the fabricated 0D/2D photodetector is ascribed to the band bending and built-in potential created at the junction of SnS 2 -QDs and MoS 2, which enhances the injection and separation efficiency of the photoexcited charge carriers. The mixed-dimensional structure also suppresses the dark current of the photodetector. The decorated SnS 2 -QDs on monolayer MoS 2 not only improve the performance of the device but also extends the spectral range to the UV region. Photoresponsivity of the device for UV, visible, and NIR region is found to be ∼278, ∼ 435, and ∼189 A/W, respectively. Fabricated devices showed maximum responsivity under the visible region attributed to the high absorbance of monolayer MoS 2 . The response time of the fabricated device is measured as ∼100 ms. These results reveal that the development of a mixed-dimensional (0D/2D) SnS 2 -QDs/MoS 2 -based high-performance and broadband photodetector is technologically promising for next-generation optoelectronic applications.