Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications

This thesis introduces fabrication and physical as well as electrical characterizations of oxide-based resistive random access memory (RRAM) which has been recently explored as one of the most promising nonvolatile memory technology. The objective of this thesis focus on the device fabrication and investigation of underlying physics of resistive switching mechanism and current conduction mechanism indifferent resistance states in oxide-based RRAM, in order to improve device performance for the implementation and integration of memory cell into CMOS circuits.