Influence of N 2 O/TEGa Ratio on Deposition of β -Ga 2 O 3 Films and Performance of Au- β -Ga 2 O 3 -Au Solar-Blind Photodetectors

In this study, a series of β -Ga 2 O 3 films are prepared by using triethylgallium (TEGa) and nitrous oxide (N 2 O) as precursors to explore the effect of N 2 O/TEGa ratio on the characteristics of β -Ga 2 O 3 films. A metal/semiconductor/metal (MSM)-type solar blind ultraviolet (UV) photodetector (PD) is fabricated using as-prepared β -Ga 2 O 3 film. It is found that an increment of N 2 O/TEGa ratio tends to suppress the oxygen vacancies in β -Ga 2 O 3 film so the device performance can be significantly improved. This work gives a deep insight into the impact of TEGa/N 2 O ratio for depositing β -Ga 2 O 3 on the film quality, the surface morphology, the chemical composition and the device performance for UV PDs.