A Temperature-Aware Large-Signal SPICE Model for Depletion-Type Silicon Ring Modulators

We present a large-signal SPICE model for the depletion-type silicon ring (RM) modulator that includes temperature dependence. The model is based on the temperature-dependent equivalent circuit for the RM and allows easy simulation of RM modulation characteristics in SPICE. The accuracy of the model is verified with the measurement results of 25-Gb/s NRZ modulation at several different temperatures. In addition, simulation of the temperature-dependent transient responses of the RM together with the RM temperature control circuit is demonstrated in the standard IC design environment.