材料科学
基质(水族馆)
钝化
薄膜晶体管
图层(电子)
光电子学
阈值电压
晶体管
负偏压温度不稳定性
复合材料
电压
电气工程
海洋学
地质学
工程类
作者
Jaeseob Lee,Byoung Hun Lee,Taewook Kang,Hye-Yong Chu,Jinoh Kwag
摘要
This letter investigates the negative‐bias temperature instability (NBTI) behavior of p‐channel low‐temperature polycrystalline silicon thin‐film transistors (LTPS TFTs) on plastic substrate. The measurements reveal that the threshold‐voltage positive shift is highly correlated to the passivation of grain‐boundary trap states. By applying the established phenomenon such as NBTI recovery and H diffusion from PI substrate, a new model is introduced to explain mechanism and verified by the experiment. With the thick buffer & bottom metal layer or newly processed PI substrate, we succeeded in adjusting the NBTI behavior of LTPS TFTs on plastic substrate.
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