Enhancement of internal quantum efficiency of green GaN-based light-emitting diodes by employing graded well/barrier/electron blocking layer

We have numerically investigated single quantum well (SQW) green InGaN-based light-emitting diode (LED) by simultaneously grading quantum well (QW), quantum barriers (QBs) and electron blocking layer (EBL). We compared the simulated results and found that our proposed structure has shown significant improvement in the hole injection. In addition, reduction of strong built-in electrostatic field in the proposed structure has improved the light output power by twice, reduced the efficiency droop by ~23% and improved the radiative recombination by ~46% in the proposed structure.