High-performance mid-wavelength InAs avalanche photodiode using AlAs0.13Sb0.87 as the multiplication layer

We report on a high-performance mid-wavelength infrared avalanche photodetector (APD) with separate absorption and multiplication regions. InAs is used as the absorber material and high-bandgap AlAs 0.13 Sb 0.87 is used as the multiplication material. At room temperature, the APD’s peak response wavelength is 3.27 μm, and the 50% cutoff wavelength is 3.5 μm. The avalanche gain reaches 13.1 and the responsivity is 8.09 A/W at 3.27 μm when the applied reverse bias voltage is 14.6 V. The measured peak detectivity D ⋆ of the device is 2.05 × 10 9 cm · Hz 0.5 / W at 3.27 μm.