光致发光
分子束外延
退火(玻璃)
量子阱
材料科学
光电子学
透射电子显微镜
铟
量子效率
量子点
外延
光学
纳米技术
物理
激光器
复合材料
图层(电子)
作者
Nils Asmus Kristian Kaufmann,Amélie Dussaigne,D. Martin,Pierre Valvin,Thierry Guillet,Bernard Gil,F. Ivaldi,S. Kret,N. Grandjean
标识
DOI:10.1088/0268-1242/27/10/105023
摘要
The effect of thermal annealing on In0.25Ga0.75N/GaN quantum wells grown by molecular beam epitaxy at 550 °C is investigated. A strong increase in the 300 K photoluminescence (PL) intensity is observed for samples annealed at 880 °C, while degradation occurs for higher temperatures. The improvement of the optical properties is ascribed to higher internal quantum efficiency (IQE), as indicated by temperature-dependent and time-resolved PL experiments. The effect of carrier localization due to possible quantum dot formation via indium clustering is ruled out based on high-resolution transmission electron microscopy imaging. IQE improvement is thus attributed to a reduction of point defects upon annealing.
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