InP epitaxy with a new metalorganic compound

A new metal-organic compound, a trimethyl-indium trimethyl-phosphine adduct has been used for the growth of InP epitaxial layers. The formation of unwanted polymer products during epitaxial growth could be avoided in this way. Epitaxial layers of good quality (ND − NA≃1016−1017 cm−3 were grown at a rate of 0.8 μm/h.