极紫外光刻
极端紫外线
计算机科学
光学
材料科学
光电子学
物理
激光器
作者
Dirk Hellweg,Sascha Perlitz,Krister Magnusson,Renzo Capelli,Markus Koch,Matt Malloy
摘要
The EUV mask infrastructure is of key importance for the successful introduction of EUV lithography into volume production. In particular, for the production of defect free masks an actinic review of potential defect sites is required. ZEISS and the SUNY POLY SEMATECH EUVL Mask Infrastructure consortium started a development program for such an EUV aerial image metrology system, the AIMS EUV. In this paper, we provide measurement data on the system’s key specifications and discuss its performance and capability status.
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