InN Layers Grown by MOCVD on a‐Plane Al2O3

The conditions for obtaining epitaxial InN layers on a‐plane (11–20) sapphire with a GaN buffer layer by MOCVD method are determined for the first time. Comparative studies show that InN layers on a‐plane sapphire have higher structural perfection and improved photoluminescence properties compared to those grown on c‐plane sapphire. Formation of indium clusters in the InN layers along with the conditions impeding their appearance is considered.