材料科学
绝缘体(电)
光电子学
电容器
导纳
晶体管
半导体
聚合物
有机半导体
薄膜晶体管
等效电路
光谱学
复合材料
电压
电气工程
图层(电子)
电阻抗
工程类
量子力学
物理
作者
Rosalba Liguori,Gian Domenico Licciardo,Luigi Di Benedetto
标识
DOI:10.1002/masy.202100255
摘要
Abstract Admittance spectroscopy is employed to explain the property differences observe between organic thin film transistors (OTFTs) fabricated with various gate insulator layers based on poly(4‐vinylphenol) (PVP) and poly(methyl methacrylate) (PMMA). The objective is achieved through the development of an equivalent circuit and a compact analytical model of the device core structure, namely, the metal–insulator–semiconductor (MIS) capacitor. The model fitting with experimental data allows to extract a wide range of parameters and, in particular, demonstrates the critical role played by the interface between insulator and semiconductor layers.
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