Feasibility study of wide bandgap power devices in space solar power station applications

This paper focuses on the reliability and radiation effects of wide bandgap SiC MOSFET power devices. Based on the failure issues of SiC MOSFET power devices used in space solar power stations, the paper investigates the feasibility of applying SiC MOSFET power devices in space solar power stations. By examining the failure mechanisms of wide bandgap SiC MOSFET power devices, the paper proposes reinforcement methods for radiation resistance and high reliability from both device and circuit application perspectives, providing feasible solutions for the use of these devices in space solar power stations.