材料科学
铁电性
电介质
电极
光电子学
极化(电化学)
X射线光电子能谱
电容器
纳秒
锡
非易失性存储器
薄膜
纳米技术
光学
电压
电气工程
核磁共振
激光器
化学
工程类
物理
物理化学
冶金
作者
Anastasia Chouprik,Ekaterina Savelyeva,Е. В. Коростылев,Ekaterina Kondratyuk,S. V. Zarubin,Nikita A. Sizykh,Maksim Zhuk,A. Zenkevich,Andrey M. Markeev,O. A. Kondratev,S. N. Yakunin
出处
期刊:Nanomaterials
[MDPI AG]
日期:2023-12-01
卷期号:13 (23): 3063-3063
摘要
The nanosecond speed of information writing and reading is recognized as one of the main advantages of next-generation non-volatile ferroelectric memory based on hafnium oxide thin films. However, the kinetics of polarization switching in this material have a complex nature, and despite the high speed of internal switching, the real speed can deteriorate significantly due to various external reasons. In this work, we reveal that the domain structure and the dielectric layer formed at the electrode interface contribute significantly to the polarization switching speed of 10 nm thick Hf0.5Zr0.5O2 (HZO) film. The mechanism of speed degradation is related to the generation of charged defects in the film which accompany the formation of the interfacial dielectric layer during oxidization of the electrode. Such defects are pinning centers that prevent domain propagation upon polarization switching. To clarify this issue, we fabricate two types of similar W/HZO/TiN capacitor structures, differing only in the thickness of the electrode interlayer, and compare their ferroelectric (including local ferroelectric), dielectric, structural (including microstructural), chemical, and morphological properties, which are comprehensively investigated using several advanced techniques, in particular, hard X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and electron beam induced current technique.
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