硅
材料科学
棱锥(几何)
光电子学
平版印刷术
光学
物理
作者
Anil Kumar,Divya Rani,Anju Saini,N. J. Joshi,Ravi Kumar Varma,Mrinal Dutta,Arup Samanta
标识
DOI:10.1002/solr.202400014
摘要
Thin silicon solar cells could be a low‐cost effective photo‐conversion device, if the device can efficiently absorb the solar spectrum. Here, a new lithography free technique has been developed for the fabrication of quasi‐periodic silicon inverted pyramids arrays (SiIPAs), which show a high light trapping phenomena in the UV‐VIS‐NIR (300 nm‐2000 nm). Fabricated SiIPA samples show a significant reduction of reflectance (3%) in the silicon absorption band (300 nm – 1000 nm). A unique additional absorption of 33 – 44% compared to the planar silicon, has been observed in the sub‐bandgap region of silicon (1100 – 2000 nm) for these samples. Photocurrent response measurement confirms the generation of additional electron‐hole pairs in the sub‐bandgap region of silicon for the SiIPA samples in comparison with planar sample. These results signify the effect of field confinement and the creation of optical resonance modes within these structures, qualitatively supported by numerical simulation. The estimated short circuit current density ( J SC ) using the experimental absorption spectrum of SiIP arrays is 55.46 mA/cm 2 , which is far higher than the Lambertian limit of ∽ 43 mA/cm 2 . The theoretical efficiency of the solar cell can be achieved up to 35.22%, which surpasses the Shockley‐Queisser limit of 33.7%. This article is protected by copyright. All rights reserved.
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