钝化
串联
钙钛矿(结构)
材料科学
光电子学
图层(电子)
能量转换效率
钙钛矿太阳能电池
太阳能电池
电压
量子效率
电流密度
光伏系统
电子工程
电极
作者
Vineet Kumar Singh,C. P. Gupta,Prem Prakash Singh,Sumaiya Parveen,Madan Singh Chauhan,Shiv P. Patel,Manish Kumar Singh,Kuldeep Yadav,Dhirendra K. Chaudhary,Ravi S. Singh,Vidya Nand Singh
标识
DOI:10.1002/adts.202501375
摘要
Abstract The power conversion efficiency (PCE) of standalone FAPbI 3 ‐based solar cells has shown a continuous increase since its inception, reaching a record PCE of ≈26%. Recombination losses, including radiative, Shockley‐Read‐Hall, and thermodynamic limits the open‐circuit voltage of standalone solar cells, thereby hindering performance. Proper surface passivation utilizing 2D perovskite materials, in conjunction with appropriate electron and hole transport layers, metal‐semiconductor contacts, and reduced defect density in absorber layer, may address these challenges. This study presents the proposal and simulation of a control device lacking a passivation layer, specifically FTO/TiO 2 /FAPbI 3 /PEDOT:PSS, alongside a target device featuring a 2D passivation layer of cyclopropylcarbamidine hydrochloride (CPAH), denoted as FTO/TiO 2 /FAPbI 3 /2D‐CPAH/PEDOT:PSS, and a two‐terminal (2T) monolithic tandem solar cell (TSC) configured as FTO/TiO 2 /FAPbI 3 /2D‐CPAH/PEDOT:PSS/IZO/n‐nc‐SiO x /i‐a‐Si:H/n‐c‐Si/i‐a‐Si:H/p‐nc‐Si:H. The illuminated current‐voltage characteristics, external quantum efficiency, integrated current density, and Suns‐V OC are analyzed to evaluate the performance of both proposed solar cells. An optimized control device yields a V OC of 1147.0 mV, whereas the device with a passivation layer achieves a V OC of 1240.3 mV, ≈98.5% of its SQ limits. The optimally designed target cell achieves a substantial PCE of 29.06%. Additionally, a notable PCE of 33.78% for the 2T TSC using the target device as the top subcell has been achieved.
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