Room‐Temperature Electric‐Field Control of Magnetization in a van der Waals Ferromagnet Fe 5 GeTe 2 for Nonvolatile Memory

Abstract Electric field control of magnetization in van der Waals magnetic materials is key to the development of next‐generation high‐density and ultralow‐power spintronic devices. However, the vdW ferromagnet‐based “electrical writing and magnetic reading” memory has not been achieved at room‐temperature. Here, the room‐temperature electric‐field control of magnetization in Fe 5 GeTe 2 via the magnetoelectric coupling effect is reported. Fe 5 GeTe 2 exhibits significant spin‐lattice coupling in its magnetically ordered state, as revealed by Raman measurements. By modulating the lattice via strain‐mediated interfacial coupling between the ferromagnetic Fe 5 GeTe 2 and the piezoelectric Pb(Mg 1/3 Nb 2/3 ) 0.7 Ti 0.3 O 3 substrate, a pronounced butterfly‐shaped electric‐field‐dependent magnetization is achieved, with a maximum magnetization change of 1.5 × 10 −2 µ B per formula unit over an electric field range ofg ±15 kV cm −1 at zero field and 300 K. The heterostructure exhibits two distinct, electrically switchable states—either in magnetization magnitude or magnetoelectric response—under pulsed electric fields. Notably, nonvolatile memory functionality achieved by encoding binary information in the magnetoelectric coefficient offers enhanced durability for long‐term data retention compared with encoding based on magnetization magnitude. These findings highlight the potential of van der Waals magnetic materials in next‐generation energy‐efficient spintronic devices and universal memory applications.