Optimization of growth conditions for direct synthesis of SnSe2 thin films via improved atmospheric pressure chemical vapor deposition

In this study, high-quality tin diselenide (SnSe 2 ) thin films were successfully synthesized using an optimized atmospheric pressure chemical vapor deposition (APCVD) technique. Precise control over key growth parameters, such as substrate temperature and deposition time , enabled the realization of films exhibiting exceptional crystallographic and optical properties . Notably, the growth temperature was found to significantly influence the SnSe 2 film morphology. Under the optimal conditions (250 °C growth temperature and 90 min of deposition), the films exhibited a strong (001) crystal orientation , 24.6 % transmittance , an optical bandgap of 1.55 eV, and an optical thickness of approximately 386.19 nm. Additionally, the films demonstrated N-type semiconductor behavior, making them highly suitable for use in electronic and optoelectronic applications . This study provides valuable insights for the large-scale production of high-performance SnSe 2 thin films suitable for electronic and optoelectronic applications. • APCVD enables direct synthesis of SnSe 2 films, offering a novel approach to fabricating thin films of layered metal sulfides. • Reveals growth temperature-dependent effects on morphology, providing insights into controlling SnSe 2 film structure. • The SnSe 2 films exhibit excellent absorption under the visible.