Photo-Excited Carrier Dynamics in Ammonothermal Mn-Compensated GaN Semiconductor

We investigated the carrier dynamics of ammonothermal Mn-compensated gallium nitride (GaN:Mn) semiconductors by using sub-bandgap and above-bandgap photo-excitation in a photoluminescence analysis and pump–probe measurements. The contactless probing methods elucidated their versatility for the complex analysis of defects in GaN:Mn crystals. The impurities of Mn were found to show photoconductivity and absorption bands starting at the 700 nm wavelength threshold and a broad peak located at 800 nm. Here, we determined the impact of Mn-induced states and Mg acceptors on the relaxation rates of charge carriers in GaN:Mn based on a photoluminescence analysis and pump–probe measurements. The electrons in the conduction band tails were found to be responsible for both the photoconductivity and yellow luminescence decays. The slower red luminescence and pump–probe decays were dominated by Mg acceptors. After photo-excitation, the electrons and holes were quickly thermalized to the conduction band tails and Mg acceptors, respectively. The yellow photoluminescence decays exhibited a 1 ns decay time at low laser excitations, whereas, at the highest ones, it increased up to 7 ns due to the saturation of the nonradiative defects, resembling the photoconductivity lifetime dependence. The fast photo-carrier decay time observed in ammonothermal GaN:Mn is of critical importance in high-frequency and high-voltage device applications.