A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements

Abstract In this study, both the Au/(pure-PVA)/n-Si (MPS-1) and Au/(CdTe:PVA)/n-Si (MPS-2) type Schottky diodes (SDs) were fabricated onto the same n-Si wafer in same conditions. After that, their electrical parameters were obtained from the current–voltage ( I – V ) and capacitance–voltage ( C – V ) measurements and compared to each other to determine the effect (CdTe:PVA) interlayer on the performance of MPS type SD. The saturation current ( I s ), ideality factor ( n ), rectification ratio (RR = I for. / I rev. ), zero-bias barrier height (Φ Bo ), and series/shunt resistances ( R s , R sh ) were derived utilizing I – V data. The values of I o , n , and Φ Bo were found as 9.13 × 10 –7 A, 11.07, 0.63 eV for MPS1 and 1.54 × 10 –10 A, 3.97, 0.85 eV for MPS2, respectively. The C − 2 – V graphs were drawn for 0.7 MHz to obtain the doping concentration of donor atoms ( N D ), Fermi energy ( E F ), BH/(Φ B ( C – V )), depletion layer width ( W D ), and maximum electric field ( E m ). The N ss − ( E c − E ss ) profile for two SDs was produced from the I – V data by considering the voltage dependence of n and BH. The values of surface states ( N ss ) were changed between 4.8 × 10 13 and 1.7 × 10 14 eV −1 cm −2 for MPS1 and 5 × 10 12 and 1.15 × 10 13 eV −1 cm −2 for MPS2, respectively. All experimental results show that the (CdTe:PVA) interlayer significantly improved the quality of the MS type SDs rather than (pure-PVA) in terms of lower values of leakage/saturation current, n , N ss , and higher RR, BH, and R sh when compared (pure-PVA) interlayer. The (CdTe:PVA) interlayer may be used instead of the conventional interlayer in the future.