材料科学
电压降
氧化铟锡
发光二极管
光电子学
紫外线
二极管
铟
扫描电子显微镜
电压
纳米技术
图层(电子)
复合材料
电气工程
电压源
工程类
作者
Xiaomeng Fan,Shengrui Xu,Yuzhi Huang,Weiguo Liu,Hongchang Tao,Jincheng Zhang,Yue Hao
标识
DOI:10.1149/2162-8777/acf39d
摘要
In this paper, a method of indium-tin oxide/Au/indium-tin oxide (IAI) structure as transparent conductive layers (TCLs) to improve the current spreading and suppress efficiency droop of ultraviolet light-emitting diodes (UV-LEDs) is investigated. The morphology and distribution of Au clusters formed by annealing are investigate by atomic force microscope and scanning electron microscope. Compared with the UV-LED without Au clusters, the forward voltage of UV-LED is reduced by 5.9% at 20 mA, light output power and wall plug efficiency increase by 64.2% and 84.2% at 300 mA for the UV-LED with IAI structure as the thickness of the Au interlayer is 1 nm. In addition, light emission distribution results show that by inserting Au interlayer, current distributes more uniform and the current spreading characteristics of UV-LED are improved. Ultimately, efficiency droop of the LED has been suppressed.
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