Fabrication of InP Vertical Gate-All-Around Transistors Using Crystal Phase Transition Heterojunction

The crystal phase heterojunction (CPHJ) is essentially a new type of heterojunction without misfit dislocations and lattice relaxation. The transistor structure using the CPHJ could significantly impact the transistor technologies. However, CPHJ has difficulty in fabricating a gate structure that modulates the electric field normal to the the CPHJ. Here, we report on the selective-area growth of WZ-InP NWs for InP NWs and demonstration of vertical gate-all-around transistors using the InP CPHJ.