Sensitizing effect of lanthanide luminescence by Mo4+/Ag+ in double perovskites: great enhancement of near-infrared emission via wide range of excitation (250–850 nm)

镧系元素 材料科学 光致发光 离子 吸收(声学) 光电子学 光子上转换 发光 量子产额 兴奋剂 激子 激发 荧光粉 卤化物 吸收光谱法 航程(航空) 发色团 光化学 可见光谱 窄带 热稳定性 发射光谱 近红外光谱
作者
Yingsheng Wang,Peipei Dang,Zixun Zeng,Dongjie Liu,Guodong Zhang,Long Tian,Kai Li,P. Ma,Yi Wei,Hongzhou Lian,Zhiyao Hou,Guogang Li,Jun Lin
出处
期刊:Light-Science & Applications [Springer Nature]
卷期号:15 (1): 87-87 被引量:2
标识
DOI:10.1038/s41377-025-02159-4
摘要

Abstract Lead-free halide double perovskites (LFHDPs) have gained prominence as eco-friendly optoelectronic materials due to their structural stability and flexible tunability. Lanthanide (Ln 3+ ) ions have rich energy levels, which can endow LFHDP materials with emissions ranging from visible to near-infrared (NIR) region through the ion doping strategy. However, their NIR applications remain limited by narrowband emission and low photoluminescence quantum yield (PLQY) due to weak absorption cross-section. Herein, Cs 2 NaInCl 6 :Ln 3+ were successfully synthesized, and the problem of low absorption of Ln 3+ ions is effectively solved. Incorporating Mo 4+ /Ag + ions achieves a near-unity PLQY and expands the excitation spectrum across the full visible range and a small part of NIR region (250–850 nm). Mechanism analysis revealed synergistic energy transfer pathways involving self-trapping excitons and intermediate energy states of Mo 4+ ion, enhancing both photon absorption and PLQY. The universal applicability of this approach has been validated across Bi-based and multiple lanthanide ions (Ln: Ho, Er, Tm, Yb). These optimized materials demonstrate exceptional broadband emission characteristics suitable for multi-scenario NIR applications, including light-emitting-diodes (LEDs), night vision, imaging, anti-counterfeiting technologies. This co-doping methodology establishes a versatile framework for overcoming inherent limitations in Ln 3+ -activated materials, offering new possibilities for efficient NIR optoelectronic devices.
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