Reactor irradiation induced changes in the electrical properties of SnO2thin films

Abstract Undoped evaporated SnO2 thin films 30 … 1000 Å thick were irradiated in a reactor up to fast neutron fluence of 7 × 1017 n/cm2 at 80 K and 350 K temperatures. The irradiation induced changes in electrical resistivity and the Hall coefficient were measured at various stages of irradiation. At 80 K the resistivity increased nearly 3 decades with no saturation in the fast neutron fluence obtained. During the 350 K irradiation periods saturation was observed to start at the fluence of 2 … 3 × 1017 n/cm2 the resistivity increasing only to a value of twice the original resistivity. The results could be explained by irradiation induced disordered regions surrounded by space charge which hinder the current conduction inside the material.