石墨烯
材料科学
拉曼光谱
化学气相沉积
石墨烯泡沫
氧化石墨烯纸
化学工程
锂(药物)
石墨烯纳米带
光电发射光谱学
兴奋剂
锂离子电池
电池(电)
纳米技术
电化学
X射线光电子能谱
光电子学
光学
物理
工程类
内分泌学
功率(物理)
医学
量子力学
作者
Arava Leela Mohana Reddy,Anchal Srivastava,Sanketh R. Gowda,Hemtej Gullapalli,Madan Dubey,Pulickel M. Ajayan
出处
期刊:ACS Nano
[American Chemical Society]
日期:2010-10-08
卷期号:4 (11): 6337-6342
被引量:1432
摘要
We demonstrate a controlled growth of nitrogen-doped graphene layers by liquid precursor based chemical vapor deposition (CVD) technique. Nitrogen-doped graphene was grown directly on Cu current collectors and studied for its reversible Li-ion intercalation properties. Reversible discharge capacity of N-doped graphene is almost double compared to pristine graphene due to the large number of surface defects induced due to N-doping. All the graphene films were characterized by Raman spectroscopy, transmission electron microscopy, and X-ray photoemission spectroscopy. Direct growth of active electrode material on current collector substrates makes this a feasible and efficient process for integration into current battery manufacture technology.
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