Annealing Effects on SnO2 Thin Film for H2 Gas Sensing

Hydrogen (H₂) is attracting attention as a renewable energy source in various fields. However, H₂ has a potential danger that it can easily cause a backfire or explosion owing to minor external factors. Therefore, H₂ gas monitoring is significant, particularly near the lower explosive limit. Herein, tin dioxide (SnO₂) thin films were annealed at different times. The as-obtained thin films were used as sensing materials for H₂ gas. Here, the performance of the SnO₂ thin film sensor was studied to understand the effect of annealing and operating temperature conditions of gas sensors to further improve their performance. The gas sensing properties exhibited by the 3-h annealed SnO₂ thin film showed the highest response compared to the unannealed SnO₂ thin film by approximately 1.5 times. The as-deposited SnO₂ thin film showed a high response and fast response time to 5% H₂ gas at 300 °C of 257.34% and 3 s, respectively.