Over 100 μm thickness CVD diamond film with perfectly aligned nitrogen-vacancy centers on highly misoriented substrates

Abstract Thick CVD diamond film with perfectly aligned nitrogen-vacancy (NV) centers leads to highly sensitive quantum sensors. A misorientation angle ( θ mis ) of the (111) substrate is a key to determine the film thickness. We investigated the dependence of the growth rate and NV center properties on θ mis (0.4°–9.9°). The growth rate increased from 1.8 to 4.4 μ m h −1 and the NV yield (=[NV centers]/[Nitrogen]) increased from 0.4% to 1.1% by increasing θ mis . Finally, a diamond film of thickness ≈120 μ m with aligned NV centers was obtained with an area of 300 μ m × 400 μ m using θ mis of 9.9°.