异质结
材料科学
铁电性
光电子学
晶体管
堆积
二极管
场效应晶体管
极化(电化学)
电子能带结构
纳米技术
工程物理
凝聚态物理
电气工程
电压
化学
物理
工程类
物理化学
有机化学
电介质
作者
Yu ZhuoLiang,Jiayou Tao,Lin Lang,Xiaoxiang Sun,Zhijun Zou,Fen Li,Yu‐Qing Zhao,Biao Liu,Li Chang,Gaohua Liao
标识
DOI:10.1088/1361-648x/acb89f
摘要
At present, chips urgently need breakthrough development in the power consumption and integration. The chip integrates billions or even tens of billions of electronic components, such as field effect transistor, diode and so on. Therefore, the research and development of new low-power electronic components with smaller size is an effective method to reduce chip power consumption and improve chip integration. In this paper, the ferroelectric field effect transistor (Fe-FET) based on two-dimensional heterostructuresα-In2Se3/ZnSe is proposed. Based on the first principle, the program will analyze the stability and band structure ofα-In2Se3/ZnSe under different stacking modes. In the heterojunction, the microphysical mechanism of ferroelectric polarization affecting the electronic structure is revealed from the aspects of charge transfer at the interface and the asymmetric surfaces with different work function. Combined with the non-equilibrium Green's function transport theory, the transport properties of Fe-FET based on theirα-In2Se3/ZnSe will be studied. The application will provide sufficient theoretical support for research and development of the device based onα-In2Se3/ZnSe structure.
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