量子点
光电子学
发光二极管
二极管
材料科学
像素
色域
亮度
电致发光
光学
图层(电子)
物理
纳米技术
作者
Tingtao Meng,Yang Zheng,Denglin Zhao,Hailong Hu,Yuan Zhu,Zhiai Xu,Songman Ju,Jipeng Jing,Xiang Chen,Hongjun Gao,Kaiyu Yang,Tailiang Guo,Fushan Li,Junpeng Fan,Qian Liu
出处
期刊:Nature Photonics
[Springer Nature]
日期:2022-02-28
卷期号:16 (4): 297-303
被引量:96
标识
DOI:10.1038/s41566-022-00960-w
摘要
With the ever-growing demand for a greater number of pixels, next-generation displays have challenging requirements for resolution as well as colour gamut. Here, to meet this need, quantum-dot light-emitting diodes (QLEDs) with an ultrahigh pixel resolution of 9,072–25,400 pixels per inch are realized via transfer printing combined with the Langmuir–Blodgett film technology. To reduce the leakage current of the devices, a honeycomb-patterned layer of wide-bandgap quantum dots is embedded between the light-emitting quantum-dot pixels as a non-emitting charge barrier layer. Red and green QLEDs are demonstrated. Notably, the red devices achieve a brightness of up to 262,400 cd m−2 at an applied voltage of 8 V and a peak external quantum efficiency of 14.72%. This work provides a promising way for achieving ultrahigh-resolution QLED devices with high performance.
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