荧光粉
量子效率
红外线的
发光
光电子学
热稳定性
材料科学
兴奋剂
半最大全宽
二极管
发光二极管
退火(玻璃)
电致发光
分析化学(期刊)
光学
化学
纳米技术
物理
图层(电子)
有机化学
复合材料
色谱法
作者
Tao Tan,Ran Pang,Shangwei Wang,Haiyan Wu,Jiutian Wang,Su Zhang,Chengyu Li,Hongjie Zhang
出处
期刊:Dalton Transactions
[The Royal Society of Chemistry]
日期:2023-01-01
卷期号:52 (24): 8414-8424
被引量:3
摘要
Cr3+-activated phosphors with high quantum efficiency show excellent promise in the field of near-infrared (NIR) phosphor converted light-emitting diodes (pc-LEDs). Here, we design an annealing program for Cr3+-doped phosphors containing variable valence elements that cannot be prepared in a reducing atmosphere to enhance their luminescence efficiency and thermal stability. A novel phosphor, Li2Mg3SnO6:Cr3+, developed by this annealing design, containing variable valence element Sn, exhibits higher quantum efficiency and better thermal stability than the one prepared by the conventional solid-state reaction. The Li2Mg3SnO6:0.03Cr3+ sample exhibits broadband NIR emission with a full width at half-maximum (FWHM) of 201 nm. After annealing, the internal quantum efficiency (IQE) and external quantum efficiency (EQE) of the Li2Mg3SnO6:0.03Cr3+ sample are enhanced from 48.5% to 84.7% and from 22.7% to 32.6%, respectively, and the thermal quenching temperature at which the luminescence intensity of the phosphor reduces to half of its initial value is promoted from ∼400 K to ∼425 K. The luminescence intensity of the optimized Li2Mg3SnO6:0.03Cr3+ sample at 425 K (∼152 °C) remains 49.2% of its initial intensity at 300 K. A NIR pc-LED is fabricated by combining the optimized Li2Mg3SnO6:0.03Cr3+ sample with a blue LED (455 nm blue chip), and the NIR radiant fluxes of 3.676 mW (at 10 mA) and 29.21 mW (at 100 mA), as well as a maximum NIR photoelectric efficiency of 14.2%, are obtained. The results show that this novel phosphor has great application potential in NIR pc-LEDs, and the annealing design exhibits huge potential for improving the optical properties of Cr3+-activated phosphors.
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