轨道能级差
材料科学
共聚物
电子迁移率
侧链
电化学
共轭体系
有机电子学
晶体管
有机半导体
聚合物
乙二醇
有机场效应晶体管
光电子学
纳米技术
高分子化学
场效应晶体管
化学
分子
有机化学
电压
物理化学
电气工程
电极
复合材料
工程类
作者
Jong‐Ho Kim,Xinglong Ren,Youcheng Zhang,Daniele Fazzi,Suraj Manikandan,Jens Wenzel Andreasen,Xiuming Sun,Sarah Ursel,Hio‐Ieng Un,Sébastien Peralta,Mingfei Xiao,James S. Town,Arkadios Marathianos,Stefan Roesner,Thanh‐Tuân Bui,Sabine Ludwigs,Henning Sirringhaus,Suhao Wang
标识
DOI:10.1002/advs.202303837
摘要
n-Type organic electrochemical transistors (OECTs) and organic field-effect transistors (OFETs) are less developed than their p-type counterparts. Herein, polynaphthalenediimide (PNDI)-based copolymers bearing novel fluorinated selenophene-vinylene-selenophene (FSVS) units as efficient materials for both n-type OECTs and n-type OFETs are reported. The PNDI polymers with oligo(ethylene glycol) (EG7) side chains P(NDIEG7-FSVS), affords a high µC* of > 0.2 F cm
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