Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β -Ga2O3 Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy and synchrotron x-ray topography

In this study, we identify the killer defect responsible for the reverse leakage in the halide vapor phase epitaxial (011) β-Ga2O3 Schottky barrier diode via ultrahigh sensitive emission microscopy, synchrotron x-ray topography, and scanning transmission electron microscopy. A polycrystalline defect was found to be causing a leakage current of −5.1 μA at a reverse bias of −50 V. They were distributed across the wafer with a density ranging from 10 to 103 cm−2. Cross-sectional scanning electron microscopy of the polycrystalline defect revealed domains with various crystal orientations accompanied by a (100)-oriented micro-crack and dislocations along the [010] direction.