材料科学
制作
GSM演进的增强数据速率
热稳定性
插层(化学)
锂(药物)
电阻率和电导率
相(物质)
降级(电信)
接触电阻
热的
光电子学
热导率
晶体管
压力(语言学)
相变
电接点
导电体
电子工程
金属
复合材料
电导率
热传导
快速热处理
硅
电阻和电导
场效应晶体管
凝聚态物理
纳米技术
作者
Li Sheng,Hongcheng Ruan,Jinpeng Wang,Yuanlong Lu,Fuwei Zhuge,Tianyou Zhai
标识
DOI:10.1002/admt.202501595
摘要
Abstract Lithium intercalation in MoS 2 drives the transformation from its semiconducting 2H to metallic 1T/1T’ phase, allowing the fabrication of low‐resistance edge contacts in transistors and diodes. However, due to the presence of chemically reactive lithium, the properties of the resulting Li x MoS 2 are sensitive to processing methods, raising additional concerns about its stability and performance when applied in electronic devices, which have rarely been discussed. Here, the processing method of lithium‐intercalated MoS 2 in n‐butyllithium solution is investigated for optimal edge contact performance in transistors. The stability of Li x MoS 2 when exposed to various solvents, ambient environment (air and vacuum) and thermal stress (from room temperature to 300 °C) is studied in terms of its electrical conductivity and phase ratio. It is found that exposure to water causes immediate degradation of the electrical conductivity of Li x MoS 2 , while under thermal stress, irreversible degradation occurs when the temperature exceeds 150 °C. Therefore, avoiding thermal stress during device fabrication is essential. Following this, an optimal procedure is proposed to fabricate low‐resistance 1T‐Li x MoS 2 edge contacts, achieving a contact resistance of ≈420 Ω µm, which also displays suppressed defect states in edge‐contacted transistors.
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