Metal-organic chemical vapor deposition of hexagonal boron nitride: from high-quality growth to functional engineering

Abstract The rapid advancement of next-generation photonic and electronic technologies has placed hexagonal boron nitride (hBN) at the forefront of research on two-dimensional materials. Renowned for its deep-ultraviolet band-edge emission, exceptional dielectric properties, and ability to host quantum defects, hBN offers a versatile platform for a broad range of applications. However, realizing these capabilities on a wafer scale requires an appropriate synthesis technique that not only ensures high crystallinity but also provides precise functionalization control—a challenge effectively addressed by metal-organic chemical vapor deposition (MOCVD). This review highlights the evolution of MOCVD from a technique primarily focused on high-quality hBN epitaxy to a powerful tool for defect engineering, doping control, and stacking sequences. By enabling wafer-scale synthesis with tunable optical, electronic, and quantum functionalities, MOCVD-grown hBN is paving the way for transformative advancements in optoelectronics, quantum information science, and next-generation semiconductor technologies.