Gate oxide technology relieving word-line break in 10 nm-class DRAMs

Abstract Modern dynamic random-access memories (DRAMs) have ultra-high densities due to the high integration of cell arrays, and the length of word-line (WL) has become considerably longer. In particular, maintaining the uniform line profile in the WL of modern 10 nm-class DRAMs is extremely challenging. In this paper, our goal is to investigate the causes of the WL break and propose a new method to solve it. We discuss a novel gate oxide (Gox) formation technology that is able to relieve the WL wiggling and disconnection. 10 nm-class DRAMs are fabricated with the novel Gox technology, and their structure and characteristics are studied.