闪光灯(摄影)
与非门
闪存
电荷(物理)
光电子学
计算机科学
材料科学
逻辑门
电气工程
计算机硬件
物理
工程类
光学
量子力学
作者
David G. Refaldi,Gerardo Malavena,Luca Chiavarone,N. Gagliazzi,Alessandro S. Spinelli,Christian Monzio Compagnoni
标识
DOI:10.1109/irps48204.2025.10983672
摘要
We present a detailed investigation of vertical charge loss in 3D NAND Flash memories down to the deep cryogenic regime. The extremely wide temperature range explored allows to derive clear experimental evidence for some important aspects of the vertical charge loss phenomenology, such as the activation energy of the physical processes involved in it, their relative weight and their possible dependence on the temperature of the Program operation. Results are of utmost importance to improve the understanding of data retention in 3D NAND Flash memories and to develop Quantitative predictive models for it.
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