Synthesis of Cs2AgSbBr6 Double Perovskite for Resistive Switching and Neuromorphic Application

Lead-free Cs2AgSbBr6 double perovskite films were synthesized via a one-step solution spin coating in air. Optimization of device parameters for resistive random-access memory (RRAM) application involved varying preheat temperature and film thickness. Characterization using X-ray diffraction, field effect scanning electron microscopy, and energy-dispersive X-ray (EDX) analyses was conducted. Memory devices exhibited bipolar resistive switching behavior with endurance up to 2000 cycles, ON/OFF ratio > 103, and long retention time (∼104 s). Results suggest electric-field-induced ionic migration of Br ions. These devices demonstrate potential for RRAM and neuromorphic computing applications, mimicking synaptic properties such as paired-pulse facilitation, post-tetanic potentiation, and spike rate-dependent plasticity. Furthermore, they exhibit brain-inspired functionalities for short- and long-term plasticity, including excitatory postsynaptic current modulation and forgetting behavior regulation by pulse frequency. The lead-free Cs2AgSbBr6 double perovskite RRAM offers a promising avenue for developing biocompatible and environmentally sustainable artificial synapses in neuromorphic systems.