Study of Resonant-Tunneling Diodes' Design Parameters' Technological Errors' Effect on the Parameters of Diodes' Equivalent Circuits

The influence of resonant-tunneling diodes' design parameters' technological errors on the parameters of diodes' equivalent circuits was studied. The research was conducted using the combined mathematical model of resonant-tunneling diodes developed by authors. The model allows to predict the parameters of diodes' equivalent circuits basing on the diodes' design parameters and taking technological factors' influence into account. It is revealed that the most significant contribution to the technological variation of the current at the studied diodes' operating point and to the technological variation of the studied diodes' inductance is made by the technological errors of the diodes' active area's layers' thickness and chemical composition. Combined with the contribution of the technological errors of resonant-tunneling diodes' spacer layers' thickness, the contribution of the technological errors of diodes' active areas' design parameters is 75%. The source of these design parameters' groups' technological errors are the technological operations of diodes' heterostructure formation.