Polarization Switching Kinetics in Thin Ferroelectric HZO Films

铁电性 切换时间 极化(电化学) 动力学 材料科学 电容器 光电子学 电场 电介质 电压 化学 电气工程 物理 量子力学 工程类 物理化学
作者
Ekaterina Kondratyuk,Anastasia Chouprik
出处
期刊:Nanomaterials [Multidisciplinary Digital Publishing Institute]
卷期号:12 (23): 4126-4126 被引量:9
标识
DOI:10.3390/nano12234126
摘要

Ferroelectric polycrystalline HfO2 thin films are the most promising material for the implementation of novel non-volatile ferroelectric memories because of their attractive properties, such as compatibility with modern Si technology, perfect scalability, low power consumption and high endurance. However, for the commercialization of ferroelectric memory, some crucial aspects of its operation should be addressed, including the polarization switching mechanism that determines the switching speed. Although several reports on polarization switching kinetics in HfO2-based layers already exist, the physical origin of retardation behavior of polarization switching at the low and medium switching fields remains unclear. In this work, we examine several models of switching kinetics that can potentially explain or describe retardation behavior observed in experimental switching kinetics for Hf0.5Zr0.5O2 (HZO)-based capacitors and propose a new model. The proposed model is based on a statistical model of switching kinetics, which has been significantly extended to take into account the specific properties of HZO. The model includes contributions of the depolarization field and the built-in internal field originating from the charge injection into the functional HZO layer during the read procedure as well as in-plane inhomogeneity of the total electric field in ferroelectric. The general model of switching kinetics shows excellent agreement with the experimental results.
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