铁电性
多铁性
材料科学
量子隧道
凝聚态物理
极化(电化学)
磁电阻
隧道枢纽
电场
极化密度
自旋极化
铁磁性
光电子学
磁化
电子
磁场
电介质
物理
化学
量子力学
物理化学
作者
Ram Chandra Subedi,Rugang Geng,Hoang Mai Luong,Weichuan Huang,Xiaoguang Li,Lawrence A. Hornak,Tho Duc Nguyen
摘要
We report electrically controlled interfacial spin polarization, or the magnetoelectric effect in multiferroic tunnel junctions by employing organic ferroelectric copolymers, poly(vinylindene fluoride-trifluoroethylene) (P(VDF-TrFE)), as a tunneling barrier. First, we show that the ferroelectric domains and spontaneous ferroelectric polarization of the P(VDF-TrFE) films can be formed in a thin interlayer. Next, we demonstrate that the tunneling magnetoresistance in the unpolarized multiferroic tunnel junction severely quenches from 21% at 20 K to 0.7% at 296 K. Remarkably, we find that the interfacial spin polarization of the device, dubbed spinterface, can be gradually tuned by controlling the ferroelectric polarization with an applied electric field. Specifically, the tunneling electromagnetoresistance can reach around 1000% while the tunneling electroresistance reaches about 30% at 200 K. We speculate that the interface might act as a polarization-dependent spin filter causing the large spinterface effect. The result suggests that organic magnetoelectric-based information storage with four-state bits is feasible at room temperature.
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