LIQUID PHASE EPITAXY

In liquid phase epitaxy (LPE), the growth cell is normally a rectangular cavity where the solution is placed. Therefore, modeling the LPE growth process is actually a three dimensional problem. However, most models in the literature developed for LPE are two dimensional. This is mainly for two reasons: for simplicity, and due to the physical nature of the growth system. Crystals grown by LPE show 3-D and edge effects in the regions very close to the crucible wall. Except the very edges, the LPE process in general produces uniform and flat crystalline layers. Thus, two-dimensional models provide reasonably accurate predictions for most purposes. This chapter presents the simulation models developed for the LPE growth of semiconductor single crystals. The focus is on the growth of silicon, binary systems, and ternaries. Some models developed for the epitaxial lateral growth and the conversion of semiconductor layers by LPE are introduced. The effect of gravity on convection is studied in an LPE growth system, known as the yo-yo technique. Various simulation results are presented and discussed.