A low on-resistance trench lateral power MOSFET in a 0.6μm smart power technology for 20-30 V applications

A 30V trench lateral power MOSFET (TLPM) has been successfully integrated with a 0.6/spl mu/m smart power technology based on an existing Bi-CDMOS process. A specific on-resistance of 16m/spl Omega/-mm/sup 2/ has been realized for the TLPM with a breakdown voltage of 35V without significantly compromising the performance of other devices in the technology. This is the lowest specific on-resistance in this voltage range, obtained to date, for a lateral power MOSFET embedded with low voltage devices.